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Grain Boundaries In Diamond Films On Si(001)

  • D. Wittorf (a1), C. L. Jia (a1), W. Jäger (a2), B. Grushko (a1), K. Urban (a1), X. Jiang (a3), M. Paul (a3) and C.-P. Klages (a3)...

Abstract

Grain boundaries in [001]-oriented diamond films deposited on Si(001) by microwave-assisted chemical vapor deposition have been investigated in plan-view and cross-section samples using high-resolution electron microscopy. The poly-crystalline diamond films used in this study had large fractions of [001]-oriented grains with typical lateral dimensions of 2 μm at film thicknesses beyond 10 μm. Grains with growth orientations near (001) exhibit generally small-angle orientation deviations between their crystal lattices. Small-angle grain boundaries of symmetric and asymmetric geometry with misorientation angles below 15° are investigated in both [110]- and [001]-directions. It is found that the structures of such small-angle grain boundaries can be described by a dislocation model. These grain boundaries are on average parallel to the {110}-plane and contain in many cases micro-facets parallel to {lll}-planes. Large-angle grain boundaries with tilt angles up to 40° are also observed in interconnected films of smaller thickness. In all cases structural units with large open volumes and additional second phases are not found at the grain boundaries.

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8. Jiang, X. and Jia, C.L., to be published in Appl. Phys. Lett.

Grain Boundaries In Diamond Films On Si(001)

  • D. Wittorf (a1), C. L. Jia (a1), W. Jäger (a2), B. Grushko (a1), K. Urban (a1), X. Jiang (a3), M. Paul (a3) and C.-P. Klages (a3)...

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