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Graded-Band-Gap Semiconductors: the Possibilities for Improvement of p-n Junction Performance

Published online by Cambridge University Press:  11 February 2011

Bogdan Sokolovskii  and
Roman Yasnytskyi
Bogdan Sokolovskii
Affiliation:
Ivan Franko National University, Lviv UA-79602, Ukraine
Roman Yasnytskyi
Affiliation:
Ivan Franko National University, Lviv UA-79602, Ukraine
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Abstract

The paper theoretically analyzes properties of graded-band-gap (GBG) p-n structures in which band gap linearly enlarges with increasing the distance from the junction metallurgical edge. It is shown that by means of band-gap grading one can significantly reduce the diffusion reverse current caused by carrier thermal generation in the structure base regions and Ohmic contacts. The numerical estimations have been made for the case of p-n junction on the basis of CdHgTe solid solution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.13
Copyright
Copyright © Materials Research Society 2003

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References

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