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Glancing Angle X-Ray Study of Crystallization of Amorphous Ge at the Ge-A1 Interface

  • S. M. Heald (a1), J. K. D. Jayanetti (a1) and R. C. Budhani (a1)

Abstract

The amorphous to crystalline transformation of Ge in Al/Ge thin film couples has been studied using glancing angle EXAFS, x-ray reflectivity and diffraction. It was found that crystallization occurs at a much lower temperature (118-150 °C) than for bulk Ge, and initiates at the Al/Ge interface. X-ray diffraction studies were made at 152 °C to study the kinetics of the reaction. After an initial period we find good agreement with a square root dependence of the time, characteristic of a diffusion limited reaction.

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Glancing Angle X-Ray Study of Crystallization of Amorphous Ge at the Ge-A1 Interface

  • S. M. Heald (a1), J. K. D. Jayanetti (a1) and R. C. Budhani (a1)

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