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Glancing Angle X-Ray Study of Crystallization of Amorphous Ge at the Ge-A1 Interface

Published online by Cambridge University Press:  25 February 2011

S. M. Heald ,
J. K. D. Jayanetti  and
R. C. Budhani
S. M. Heald
Affiliation:
Brookhaven National Laboratory, Upton NY 11973
J. K. D. Jayanetti
Affiliation:
Brookhaven National Laboratory, Upton NY 11973
R. C. Budhani
Affiliation:
Brookhaven National Laboratory, Upton NY 11973
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Abstract

The amorphous to crystalline transformation of Ge in Al/Ge thin film couples has been studied using glancing angle EXAFS, x-ray reflectivity and diffraction. It was found that crystallization occurs at a much lower temperature (118-150 °C) than for bulk Ge, and initiates at the Al/Ge interface. X-ray diffraction studies were made at 152 °C to study the kinetics of the reaction. After an initial period we find good agreement with a square root dependence of the time, characteristic of a diffusion limited reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 651
Copyright
Copyright © Materials Research Society 1991

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References

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