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Giant Magnetoresistance of Self-Assembled ErAs Islands in GaAs

  • D.R. Schmidt (a1), J.P. Ibbetson (a2), D.E. Brehmer (a1), C.J. Palmstrøm (a3) and S.J. Allen (a1)...

Abstract

We have integrated nanometer-sized ErAs islands in GaAs, resulting in a nano-composite of paramagnetic particles in a semiconductor. Negative giant magnetoresistance of up to four orders of magnitude is observed at low temperatures. We can control the density and size of the ErAs islands, making this an ideal system to investigate transport in magnetic nano-structures.

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