Rapid thermal processing chemical vapor deposition was used to grow single and multilaye repitaxial GexSil-x/Si structures on (100)Si substrates using GeH4 and SiH2Cl2 at 900°C and 1000°C with SiH2Cl2:GeH4 ratios of 14:1 to 95:1 at 5 Torr. Misfit dislocation free layers with few threading dislocations were grown for Ge concentrations of up to 13%. Misfit dislocation networks aligned along <110> were formed at the interface of films with higher Ge concentrations. Dislocation loops were also found at the interface. GexSil-x layers grown at 1000°C were highly crystalline, but relaxed. In multi-layer structures, AES depth profiles showed Ge pile-up at the GexSi1-x/Si interface of layers with higher Ge concentrations.