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Gettering of Dissolved and Segregated Impurities in Multicrystalline Silicon Wafers

Published online by Cambridge University Press:  03 September 2012

M. Stemmer ,
I. Perichaud  and
S. MartiNuzzi
M. Stemmer
Affiliation:
Laboratoire de Photoélectricité des Semi-conducteurs, case 231, Faculté des Sciences et Techniques de Marseille-St. Jérôme, 13397 Marseille Cedex 13, France.
I. Perichaud
Affiliation:
Laboratoire de Photoélectricité des Semi-conducteurs, case 231, Faculté des Sciences et Techniques de Marseille-St. Jérôme, 13397 Marseille Cedex 13, France.
S. MartiNuzzi
Affiliation:
Laboratoire de Photoélectricité des Semi-conducteurs, case 231, Faculté des Sciences et Techniques de Marseille-St. Jérôme, 13397 Marseille Cedex 13, France.
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Abstract

Phosphorus gettering by diffusion from a POCl3 source was applied to matched wafers cut out of the same region of a cast ingot. Light Beam Induced Current mappings with wavelengths in the range between 840 and 980 nm lead to follow the variation of minority carrier diffusion length after gettering at 900°C for 120 and 240 mn, especially near extended crystallographic defects like dislocations and grain boundaries.

The mappings show that after the gettering treatments, the local values of L increase due to the reduction of the recombination strength of extended defects and to the improvement of the homogeneous regions of the grains.

As SIMS analyses indicate that Fe, Cu and Ni atoms are gettered, it is reasonable to assume that these impurities were initially dissolved in the grains and also segregated at the extended defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 975
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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