Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-18T22:14:17.174Z Has data issue: false hasContentIssue false
  • English
  • Français

Ge quantum well plasmon-enhanced quantum confined Stark effect modulator

Published online by Cambridge University Press:  04 February 2014

P. Chaisakul ,
D. Marris-Morini ,
N. Abadía ,
J. Frigerio ,
G. Isella ,
D. Chrastina ,
S. Olivier ,
R. Espiau de Lamaestre ,
T. Bernardin  and
J.-C. Weeber
...Show all authors
P. Chaisakul
Affiliation:
IEF, Université Paris-Sud, CNRS, 15 rue Andrè Ampère, 91405 Orsay, France
D. Marris-Morini
Affiliation:
IEF, Université Paris-Sud, CNRS, 15 rue Andrè Ampère, 91405 Orsay, France
N. Abadía
Affiliation:
IEF, Université Paris-Sud, CNRS, 15 rue Andrè Ampère, 91405 Orsay, France CEA-LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France
J. Frigerio
Affiliation:
L-NESS, Politecnico di Milano, Polo di Como, Via Anzani 42, I 22100 Como, Italy
G. Isella
Affiliation:
L-NESS, Politecnico di Milano, Polo di Como, Via Anzani 42, I 22100 Como, Italy
D. Chrastina
Affiliation:
L-NESS, Politecnico di Milano, Polo di Como, Via Anzani 42, I 22100 Como, Italy
S. Olivier
Affiliation:
CEA-LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France
R. Espiau de Lamaestre
Affiliation:
CEA-LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France
T. Bernardin
Affiliation:
ICB, Université de Bourgogne, CNRS, 9 Avenue Alain Savary, 21078 Dijon, France
J.-C. Weeber
Affiliation:
ICB, Université de Bourgogne, CNRS, 9 Avenue Alain Savary, 21078 Dijon, France
L. Vivien
Affiliation:
IEF, Université Paris-Sud, CNRS, 15 rue Andrè Ampère, 91405 Orsay, France
Get access

Abstract

We theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/SiGe QWs.

Keywords

optical propertiesoptoelectronicoptical
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1627: Symposium L – Photonic and Plasmonic Materials for Enhanced Optoelectronic Performance , 2014 , mrsf13-1627-l09-60
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Miller, D. A. B., “Device Requirements for Optical Interconnects to Silicon Chips,” Proc. IEEE 97, 1166–1185 (2009).CrossRefGoogle Scholar
Bastard, G., Wave Mechanics Applied to Semiconductor Heterostructures (Les Editions de Physique, Les Ulis, 1988).Google Scholar
Isella, G., Chrastina, D., Rössner, B., Hackbarth, T., Herzog, H.-J., König, U., and Känel, H. von, Solid State Electron. 48, 1317 (2004).CrossRefGoogle Scholar
Palik, E. D., Handbook of Optical Constants (Academic, 1985).Google Scholar