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Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate

  • Sagnik Dey (a1), Se-Hoon Lee (a2), Sachin V. Joshi (a3), Prashant Majhi (a4) and Sanjay K. Banerjee (a5)...

Abstract

A MOSFET formed by a Si cantilever channel suspended between source/drain “anchors” wrapped all-around by high-κ dielectric and metal gate is demonstrated. The device shows excellent subthreshold characteristics and low leakage currents due to the fully depleted body and the gate-all-around architecture implemented with a high-κ dielectric and metal gate. At the same time this also allows a high drive current due to mobility enhancements arising from volume inversion of the cantilever channel such that a large ION/IOFF is achieved.

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Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate

  • Sagnik Dey (a1), Se-Hoon Lee (a2), Sachin V. Joshi (a3), Prashant Majhi (a4) and Sanjay K. Banerjee (a5)...

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