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Gas Phase Characterization in LP CVD Processes by a Performant Raman Equipment: Gas Temperature in the Vicinity of the Substrate

Published online by Cambridge University Press:  21 February 2011

R. Gaufres ,
P. Huguet ,
D. Boya  and
J. Lafforet
R. Gaufres
Affiliation:
Laboratorie de Spectroscopie Moléculaire, Université de Montpellier II, 34095 Montpellier Cedex 2, France.
P. Huguet
Affiliation:
Laboratorie de Spectroscopie Moléculaire, Université de Montpellier II, 34095 Montpellier Cedex 2, France.
D. Boya
Affiliation:
Société Comurhex, Division Vapodéposition, BP 29, 26701 Pierrelatte Cedex, France.
J. Lafforet
Affiliation:
Société Comurhex, Division Vapodéposition, BP 29, 26701 Pierrelatte Cedex, France.
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Abstract

Using a performant spontaneous Raman equipment, with intracavity laser excitation, the temperatures of tungsten hexafluoride and hydrogen have been measured in a cell reproducing the industrial conditions of C.V.D. tungsten deposition, in the vicinity of a heated graphite substrate. For tungsten hexafluoride, a vibrational temperature, much lower than that of the substrate, is determined. For hydrogen, rotational temperatures much higher than that of the substrate are found. After a discussion of the sources of experimental errors, possible interpretations of the results are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 131
Copyright
Copyright © Materials Research Society 1990

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References

1.Gaufrbs, R. and Sportouch, S., in Advances in Raman Spectroscopy, Vol. I, edited by Mathieu, J.-P. (Heyden and Son Ltd, London, 1973), p. 478.Google Scholar
2.Gaufr~s, R. and Huguet, P., J. de Physique, Colloques (to be published).Google Scholar
3.Allison, W. and Feuerbacher, B., Phys. Rev. Lett. 45, 2040 (1980).Google Scholar