Hostname: page-component-7c8c6479df-hgkh8 Total loading time: 0 Render date: 2024-03-19T06:21:24.926Z Has data issue: false hasContentIssue false

GaNxAs1-x Growth by Molecular Beam Epitaxy with Dispersive Nitrogen

Published online by Cambridge University Press:  21 March 2011

S.Z. Wang
Affiliation:
School of Electrical and Electronic Engineering, Microelectronics Center, Block S1, S1-B2c-20, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore Singapore-Massachusetts Institute of Technology(MIT) Alliance, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore E-mail: szwang@ntu.edu.sg; esfyoon@ntu.edu.sg
S.F. Yoon
Affiliation:
School of Electrical and Electronic Engineering, Microelectronics Center, Block S1, S1-B2c-20, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
T.K. Ng
Affiliation:
School of Electrical and Electronic Engineering, Microelectronics Center, Block S1, S1-B2c-20, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
W.K. Loke
Affiliation:
School of Electrical and Electronic Engineering, Microelectronics Center, Block S1, S1-B2c-20, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
W.J. Fan
Affiliation:
School of Electrical and Electronic Engineering, Microelectronics Center, Block S1, S1-B2c-20, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
Get access

Abstract

The effect of energetic nitrogen ion bombardment during growth may have a deleterious effect on the material quality. To avoid the bombardment effect of energetic nitrogen ions, a modified mode for GaAsN growth using dispersive nitrogen is reported. High quality GaAsN epilayers and good GaAsN/GaAs interface were achieved using this growth mode. The results suggest that the surface of samples grown using dispersive nitrogen has fewer defects than those grown using direct nitrogen beam. The optical property of GaAsN samples grown using the dispersive nitrogen technique was found to improve, due to the lower ion bombardment effect. This growth technique is expected to be advantageous for growing high quality GaAsN materials for optoelectronic applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Yang, X., Heroux, J.B., Jurkovic, M.J., and Wang, W.I.. Appl.Phys.Lett. 76, 795(2000).Google Scholar
[2] Ungaro, G., Le, G. Roux, Teissier, R., and Harmand, J.C.. Electron.Lett. 35, 1246(1999).Google Scholar
[3] Kondow, M., Uomi, K., Niwa, A., Kitatani, T., Watahiki, S., and Yazama, Y.. Jpn.J.Appl.Phys., Part 1, 35, 1273(1996).Google Scholar
[4] Sato, S. and Satoh, S.. IEEE Photonics Technol. Lett. 11, 1560(1999).Google Scholar
[5] Weyers, M. and Sato, M.. Appl.Phys.Lett. 62, 1396(1993).Google Scholar
[6] Kondow, M., Uomi, K., Kitatani, T., Watahiki, S. and Yazawa, Y.. J.Cryst.Growth 164, 175(1996).Google Scholar
[7] Qiu, Y., Nikishin, S.A., Temkin, H., Faleev, N.N. and Kudriavtsev, Yu. A.. Appl.Phys.Lett. 70, 3242(1997).Google Scholar
[8] Bi, W.G. and Tu, C.W.. Appl.Phys.Lett. 70, 1608(1997)Google Scholar
[9] EPI Application Note, 97–3(1997).Google Scholar
[10] Cho, A.Y. and Arthur, J.R.. Progress in Solid-State Chemistry 10, Part 3, 157(1975).Google Scholar
[11] Wang, S.Z.. Doctoral Disserrtation: Design and Growth of II-VI Materrials for Blue/Green Laser Diodes (Shanghai Institute of Technical Physics, Academia Sinica, Shanghai, 1997), p.21.Google Scholar
[12] Harmand, J.C., Ungaro, G., Largeau, L. and Roux, G. Le. Appl.Phys.Lett. 77, 2482(2000).Google Scholar
[13] Myers, T.H., Millecchia, M.R., Ptak, A.J., Ziemer, K.S., and Stinespring, C.D.. J.Vac.Sci.Technol.B 17, 1654(1999).Google Scholar