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GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications

  • Zheng Sun (a1), Shigeyoshi Usami (a1), Di Lu (a1), Takahiro Ishii (a1), Marc Olsson (a1), Kouhei Yamashita (a1), Tadashi Mitsunari (a1), Yoshio Honda (a1) and Hiroshi Amano (a1) (a2) (a3)...

Abstract

We developed a new GaN on SiC growth method by metalorganic vapour phase epitaxy (MOVPE) using of a single 2-dimension-growth step. Prior to epitaxy, to inhibit pre-reaction of Si-face SiC substrate with TMGa and NH3, TMAl was flowed without NH3. 1.5 μm of undoped crack-free GaN was grown on 6H-SiC (Si-face). Without buffer layer, the vertical resistance of GaN/SiC structure was found to be around 82.1Ω as determined by I-V characteristic. Further reduction in vertical resistance is expected by growth of n-GaN (1.5μm)/SiC structure (300μm). We also expect a SiC-based GaN heterostructure vertical FET will achieve high power and high switching speed performance.

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Keywords

GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications

  • Zheng Sun (a1), Shigeyoshi Usami (a1), Di Lu (a1), Takahiro Ishii (a1), Marc Olsson (a1), Kouhei Yamashita (a1), Tadashi Mitsunari (a1), Yoshio Honda (a1) and Hiroshi Amano (a1) (a2) (a3)...

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