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GaN/AlxGa1−xN Wurtzite Semiconductor Superlattices

  • Shang Yuan Ren (a1) (a2) and John D. Dow (a1)

Abstract

A theory of electronic structures of NGaN×NAlGaN GaN/Alx Ga1−xN wurtzite semiconductor superlattices (grown in the direction of the c-axis) is developed and used to predict the superlattices' band structures, energy gaps, and the “deep” energy levels of substitutional s- and p-bonded defects in them. In addition, the valence band offset of GaN with respect to AlN, the one adjustable parameter of the theory, is determined to be about 0.4 times the total fundamental band-gap difference, by fitting the optical data for the superlattices' fundamental band gaps as a function of the layer thicknesses NGaN and NAlN, with the valence band edge of AlN being at lower energy.

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GaN/AlxGa1−xN Wurtzite Semiconductor Superlattices

  • Shang Yuan Ren (a1) (a2) and John D. Dow (a1)

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