Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-20T07:50:42.365Z Has data issue: false hasContentIssue false

GaN quantum dots as charge storage elements for memory devices

Published online by Cambridge University Press:  07 June 2012

P. Dimitrakis
Affiliation:
IMEL – NCSR “Demokritos”, P.O.Box 60228, 153 10 Ag. Paraskevi, Greece
P. Normand
Affiliation:
IMEL – NCSR “Demokritos”, P.O.Box 60228, 153 10 Ag. Paraskevi, Greece
C. Bonafos
Affiliation:
CEMES – CNRS, 29 Rue Jeanne Marvig, BP 94347, 31055 Toulouse cedex 4, France
E. Papadomanolaki
Affiliation:
Physics Department, University of Crete, P.O.Box 2208, 71003 Heraklion, Greece
E. Iliopoulos
Affiliation:
Physics Department, University of Crete, P.O.Box 2208, 71003 Heraklion, Greece Microelectronics Research Group, IESL-FORTH, P.O.Box 1527, 71110 Heraklion, Greece
Get access

Abstract

We investigated the fabrication and the memory characteristics of metal-oxide-semiconductor (MOS) capacitors with GaN quantum-dots (QDs) embedded in the gate insulator. The GaN-QDs, which act as discrete charge storage nodes, were deposited by radio-frequency molecular-beam-deposition (RF-MBD). The influence of the deposition dose on the QDs size and density was investigated by TEM studies. Subsequent electrical characterization measurements on memory capacitors revealed enhanced electron charge trapping leading to significant memory windows. Charge retention measurements at room temperature showed that the sample with the lowest concentration of QDs exhibits a significant programming window after ten-years.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dimitrakis, P., Normand, P., Tsoukalas, D., “Si Nanocrystal Memories”, in Silicon Nanophotonics, ed. Khriachtchev, L., Pan Publishing, Singapore, 2008 (ISBN-13 978-981-4241-11-3).Google Scholar
2. Lai, S. K., IBM J. Res. Dev. 52, 529 (2008).Google Scholar
3. Hou, T.-H., Lee, C., Narayanan, V., Ganguly, U., Kan, E.C., IEEE Trans. Elect. Dev. 53, 3095 (2006).Google Scholar
4. Baik, S.J., Choi, S., Chung, U-In, Moon, J.T., Solid-State Electron. 48, 1475 (2004).Google Scholar
5. Joo, Kyong-Hee, Moon, Chang-Rok, Lee, Sung-Nam, Wang, Xiofeng, Kyu Yang, Jun, Yeo, In-Seok, Lee, Duckhyung, Nam, Okhyun, Chung, U-In, Tae Moon, Joo, Ryu, Byung-Il, IEDM Tech. Dig. 2006, doi:10.1109/IEDM.2006.346950.Google Scholar
6. Nicollian, E. H. and Brews, J. R., MOS (Metal-Oxide-Semiconductor) Physics and Technology, John Wiley & Sons, pp. 148156, New York (1982).Google Scholar
7. Dimitrakis, P., Iliopoulos, E., Normand, P., Nanocrystal Memory Device Utilizing GaN Quantum Dots by RF MBD , in Materials and Physics of Nonvolatile Memories II, edited by Bonafos, C., Fujisaki, Y., Dimitrakis, P., Tokumitsu, E. (Mater. Res. Soc. Symp. Proc.Vol. 1250, Warrendale, PA, 2010), 1250-G06-03.Google Scholar