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GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy

  • A. E. Nikolaev (a1) (a2), YU. V. Melnik (a1) (a2), N. I. Kuznetsov (a2), A. M. Strelchuk (a2), A. P. Kovarsky (a3), K. V. Vassilevski (a2) (a4) and V. A. Dmitriev (a5) (a4)...

Abstract

For the first time, GaN pn-junctions were fabricated by hydride vapor phase epitaxy. GaN pn-structures were grown directly on 6H-SiC substrates without any buffer layer. Undoped GaN layers were n-type with Nd-Na concentration ranged from 1×1017 to 5×1018 cm−3. Magnesium was used as an acceptor to grow p-type GaN layers. Mg atomic concentration determined by secondary ion mass spectroscopy ranged from 5×1019 to 5×1020 cm−3. As-grown GaN layers doped with Mg were p-type, and p-type conductivity was improved by post-growth anneal. Mesa diodes with a vertical current flow geometry were formed by reactive ion etching. The position of the GaN pn-junction was determined by the electron beam induced current method. The electrical characteristics of the pn diodes were studied. Electroluminescence from the pn diodes was measured.

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GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy

  • A. E. Nikolaev (a1) (a2), YU. V. Melnik (a1) (a2), N. I. Kuznetsov (a2), A. M. Strelchuk (a2), A. P. Kovarsky (a3), K. V. Vassilevski (a2) (a4) and V. A. Dmitriev (a5) (a4)...

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