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GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry

  • M. Losurdo (a1), P. Capezzuto (a1) and G. Bruno (a1)

Abstract

Cubic and hexagonal GaN layers have been grown on GaAs (001) and α-Al2O3 (0001) substrates, respectively, by remote plasma metalorganic chemical vapor deposition (RPMOCVD). In situ spectroscopic ellipsometry is used to monitor in real time the chemistry and kinetics of the GaN growth. The subtrate/GaN interface formation is highlighted and the effect of the substrate plasma nitridation on the initial growth stage is discussed.

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