Skip to main content Accessibility help

GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry

  • M. Losurdo (a1), P. Capezzuto (a1) and G. Bruno (a1)


Cubic and hexagonal GaN layers have been grown on GaAs (001) and α-Al2O3 (0001) substrates, respectively, by remote plasma metalorganic chemical vapor deposition (RPMOCVD). In situ spectroscopic ellipsometry is used to monitor in real time the chemistry and kinetics of the GaN growth. The subtrate/GaN interface formation is highlighted and the effect of the substrate plasma nitridation on the initial growth stage is discussed.



Hide All
[1] Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).
[2] Moustakas, T.D., Lei, T., Molnar, R.J., Physica B, 185, 36 (1993).
[3] Wang, K., Pavlidis, D., Singh, J., J. Appl. Phys. 80, 1823 (1996).
[4] Daudin, B., Widmann, F., Feuillet, G., Samson, Y., Arlery, M., Rouviere, J.L., Phys. Rev. B, 56, R7069 (1997).
[5] Bruno, G., Capezzuto, P., Losurdo, M., Phys. Rev. B, 54, 17175 (1996).
[6] Aspnes, D.E., J. Phys. (Paris) Colloq. 10, 3 (1983)
[7] Losurdo, M., Capezzuto, P., Bruno, G., Irene, E.A., Phys. Rev. B, 58, 1 (1998).
[8] Tarsa, E.J., Heying, B., Wu, X.H., Fini, P., DenBaars, S.P., Speck, J.S., J. Appl. Phys. 82, 5472 (1997)
[9] Gwo, S., Tokumoto, H., Miwa, S., Appl. Phys. Lett. 71, 362 (1997).
[10] Yang, H., Brandt, O., Wassermeier, M., Behrend, J., Schonherr, H.P., Ploog, K.H., Appl. Phys. Lett., 68, 244 (1996).
[11] Cheng, T.S., Jenkins, L.C., Hooper, S.E., Foxon, C.T., Orton, J.W., Lacklison, D.E., Appl. Phys. Lett., 66, 1509 (1995).
[12] Edgar, J.H., Properties of Group III Nitrides, EMIS Datareviews Series No. 11, INSPEC, London, United Kingdom, 1994.
[13] Brandt, O., Yang, H., Jenichen, B., Suzuki, Y., Daweritz, L., Ploog, K.H., Phys. Rev. B, 52, R2253 (1992).
[14] Kikuchi, A., Hoshi, H., Kishino, K., Jpn. J. Appl. Phys. 33, 688 (1994).
[15] Brandt, O., Yang, H., Trampet, A., Wassermeier, M., Ploog, K.H., Appl. Phys. Lett, 71, 473 (1997).
[16] Losurdo, M., Capezzuto, P., Bruno, G., Lefebvre, P.R., Irene, E.A., J. Vac. Sci. Technol. B, 16, 2665 (1998).
[171 Ambacher, O., J. Phys. D: Appl. Phys. 31, 2653 (1998).
[18] Keller, S., Keller, B.P., Wu, Y.F., Heying, B., Kapolnek, D., Speck, J.S., Mishra, U.K., S.P. DenBaars, Appl. Phys. Lett. 68, 1525 (1996)
[19] Uchida, K., Watanabe, A., Yano, F., Kouguchi, M., Tanaka, T., Minagawa, S., J. Appl. Phys. 79, 3487 (1996).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed