Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-19T12:52:46.477Z Has data issue: false hasContentIssue false
  • English
  • Français

GaN Film Growth by a Supersonic Arcjet Plasma

Published online by Cambridge University Press:  15 February 2011

M. A. Cappelli ,
A. E. Kull ,
K. Schwendner ,
H. Lee ,
S. J. Harris Jr  and
J. Mroczkowski
M. A. Cappelli
Affiliation:
Mechanical Engineering Department, Stanford University, Stanford, CA. 94305-3032
A. E. Kull
Affiliation:
Mechanical Engineering Department, Stanford University, Stanford, CA. 94305-3032
K. Schwendner
Affiliation:
Mechanical Engineering Department, Stanford University, Stanford, CA. 94305-3032
H. Lee
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA.
S. J. Harris Jr
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA.
J. Mroczkowski
Affiliation:
Loral Infrared & Imaging Systems, Lexington, MA.
Get access

Abstract

This paper reports on preliminary studies of GaN growth obtained using a supersonic nitrogen arcjet plasma expanding into low pressure. A hydrogen-free and carbon-free growth environment was achieved by use of a Ga vapor source positioned downstream of the expanding plume. GaN growth rates of around 8 μm/hour were obtained in these preliminary studies. We believe these growth rates are the highest reported for a non-chemical decomposition process. The growth rates are attributed to the very high nitrogen atom fluxes estimated to be on the order of 1019 atoms/cm2/sec. The initial growth rates are believed to be well below those possible with a fully optimized system. The GaN films are characterized by Raman spectroscopy, visible-IR transmission, and x-ray diffraction. The deposited films appear to be single crystal and epitaxial on basal plane sapphire substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 359
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lei, T., Moustakas, T. D., Graham, R. J., He, Y., and Berkowitz, S. J., J. Appl. Phys. 71, 4933, 1992.Google Scholar
2. Strite, S., Lin, M. E., and Morkoc, H., Thin Solid Films 231, 197, 1993.Google Scholar
3. Oberman, D. B., Lee, H., Gotz, W. K., and Harris, J. S. Jr, J. Crystal Growth 150, 912, 1995.Google Scholar
4. Hiramatsu, K., Detchprohm, T., and Akasaki, I., Jpn. J. Appl. Phys., 32, 1528, 1993.Google Scholar
5. Detchprohm, T., Hiramatsu, K., Amano, H., and Akasaki, I., Appl. Phys. Lett., 61, 2688, 1992.Google Scholar
6. Loh, M. H. and Cappelli, M. A., Diamond and Related Materials 2, pp. 454–461, 1993.Google Scholar
7. Cappelli, M. A., “Arcjet Synthesis of Diamond”, in Handbook of Industrial Diamond and Diamond Films, 1st Edition, Edited by Prelas, M., Dekker, Marcel, 1996.Google Scholar
8. We are using an empirical relation for the flow velocity based on measurements of averagevelocity (thrust force/mass flow rate) as a function of specific energy.Google Scholar
9. Goodwin, D. G., J. Appl. Phys. 74, 6895, 1993.Google Scholar
10. Kozawa, T., Kachi, T., Kano, H., Taga, Y., Hashimoto, M., Koide, N., and Manabe, K., J. Appl.Phys. 75, 1098, 1994.Google Scholar