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GaN Epitaxial Growth by Molecular Beam Epitaxy utilizing AlGaN Buffer Layer with Nanopipes

Published online by Cambridge University Press:  01 February 2011

F. Yun ,
L. He ,
M. A. Reshchikov ,
H. Morkoç ,
J. Jasinski  and
Z. Liliental-Weber
F. Yun
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284
L. He
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284
M. A. Reshchikov
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284
H. Morkoç
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284
J. Jasinski
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

GaN layers were grown on AlGaN with nanopipes by molecular beam epitaxy (MBE) and analyzed. AlGaN films were grown by MBE using rf-plasma nitrogen source under metal-rich condition. Within the Al composition range of 0.5-0.6, open-end nanopipes were formed at the surface of AlGaN films with a density of ∼6×109 cm-2 and a size ranging from 10 to 20 nm. These nanopipes, observed within ∼300 nm of the surface, served as a nanoporous AlGaN template for re-growth of GaN epilayers. GaN epilayers grown to different thickness by MBE were studied for their microstructural and optical properties. For an AlGaN buffer layer with dislocation density of 3×1010 cm-2 near its surface, the overlaying GaN layers with thickness ranging from 0.1 μm to ∼2μm were grown and analyzed by transmission electron microscopy for dislocation density. The GaN layer started with hexagonal islands on the nanopiped AlGaN and began to coalesce at about 0.1μm thickness. At a thickness of 2.0 μm, the dislocation density reduced to ∼1×109 cm-2. Low temperature photoluminescence data demonstrate the improved optical quality of GaN epilayer grown on the porous AlGaN buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C7.4
Copyright
Copyright © Materials Research Society 2003

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References

1 Zhang, X., Dapkus, P. D., and Rich, D. H., Appl. Phys. Lett. 77, 1496 (2000).Google Scholar
2 Linthicum, K., Gehrke, T., Thomson, D., Carlson, E., Rajagopal, P., Smith, T., Batchelor, D., and Davis, R., Appl. Phys. Lett. 75, 196 (1999).Google Scholar
3 Kusakabe, K., Kikuchi, A., and Kishino, K., Jpn. J. Appl. Phys., Part 2 40, L192 (2001).Google Scholar
4 Mynbaeva, M., Titkov, A., Kryganovskii, A., Ratnikov, V., Mynbaev, K., Huhtinen, H., Laiho, R., and Dmitriev, V., Appl. Phys. Lett. 76, 1113 (2000).Google Scholar
5 Mynbaeva, M., Titkov, A., Kryzhanovski, A., Kotousova, I., Zubrilov, A. S., Ratnikov, V. V., Davydov, V. Y., Kuznetsov, N.I., Mynbaev, K., Tsvetkov, D.V., Stepanov, S., Cherenkov, A., and Dmitriev, V.A., MRS Internet J. Nitride Semicond. Res. 4, 14 (1999).Google Scholar
6 Yun, F., Reshchikov, M. A., He, L., Morkoç, H., Inoki, C., and Kuan, T. S., Appl. Phys. Lett. 81, 4142 (2002).Google Scholar
7 Shimizu, M., Kawaguchi, Y., Hiramatsu, K., and Sawaki, N., Jpn. J. Appl. Phys., Part 1 36, 3381 (1997).Google Scholar
8 He, L., Reshchikov, M. A., Yun, F., Huang, D., King, T. and Morkoç, H., Appl. Phys. Lett. 81, 2178 (2002).Google Scholar
9 Yun, F., Reshchikov, M. A., He, L., King, T., Morkoç, H., Novak, S.W., and Wei, L., J. Appl. Phys. 92, 4837 (2002).Google Scholar
10 Yun, F., Huang, D., Reshchikov, M. A., King, T., Baski, A. A., Litton, C. W., Jasinski, J., LilientalWeber, Z., Visconti, P., and Morkoç, H., Phys. Stat. Sol. (b) 228, 543 (2001).Google Scholar