Skip to main content Accessibility help
×
Home

GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1100] oriented GaN substrates

  • C. Q. Chen (a1), M. E. Gaevski (a1), W. H. Sun (a1), E. Kuokstis (a1), J. W. Yang (a1), G. Simin (a1), M. A Khan (a1), H. P. Maruska (a2), D. W. Hill (a2), M. M. C. Chou (a2), J. J. Gallagher (a2), B. H Chai (a2), J. H. Song (a3), M. Y. Ryu (a3) and P. W. Yu (a3)...

Abstract

We report on the homoepitaxial growth of GaN on freestanding [1100] oriented GaN substrates using metalorganic chemical vapor deposition. A proper pretreatment of the substrates was found to be essential for the GaN homoepitaxy. The influence of growth conditions such as V/III molar-ratio and temperature on the surface morphology and optical properties of epilayers was investigated. Optimized pretreatment and growth conditions led to high quality [1100] oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Based on these GaN epilayer, AlGaN/GaN multiple quantum wells have been grown on the freestanding M-plane GaN. Photoluminescence data confirm that built-in electric field for M-plane structures is very weak, and this situation results in a stronger PL intensity in comparison with C-plane multiple quantum wells in tests at low excitation level.

Copyright

References

Hide All
1) Nakamura, S. and Fasol, G., The blue Laser Diode (Spring, Heidelberg, 1997).
2) Pearton, S. J., Zolper, J. C., Shul, R. J., and Ren, F., J. Appl. Phy. 86, 1 (1999).
3) Bernardini, F., Fiorentini, V. and Vanderbilt, D., Phys. Rev. B 56, 10024 (1997).
4) Deguchi, T., Sekiguchi, K., Nakamura, A., Sota, T., Matsuo, R., Chichibu, S. and Nakamura, S., Jpn. J. Appl. Phys., Part 2 38, L914 (1999).
5) Tripathy, S., Soni, R. K., Asahi, H., Iwata, K., Kuroiwa, R., Asami, K. and Gonda, S., J. Appl. Phys. 85, 8386 (1999).
6) Craven, M. D., Lim, S. H., Wu, F., Speck, J. S. and DenBaars, S. P., Appl. Phys. Lett. 81, 469 (2002).
7) Miskys, C.R., Kelly, M. K., Ambacher, O., Martinez-Criado, G., and Stutzmann, M., Appl. Phys. Lett. 77, 1858 (2000).
8) Waltereit, P., Brandt, O., Trampert, A., Grahn, H. T., Menniger, J., Ramsteiner, M., Reiche, M., and Ploog, K. H., Nature (London) 406, 865 (2000).
9) Waltereit, P., Brandt, O., Ramsteiner, M., Trampert, A., Grahn, H. T., Menniger, J., Reiche, M. and Ploog, K. H., J. Cryst. Growth 227, 437 (2001).
10) Maruska, H. P. and Tietjen, J. J., Appl. Phys. Lett. 15, 327 (1969).
11) Sato, H., Sugahara, T., Hao, M., Naoi, Y., Kurai, S., Yamashita, K., Nishino, K. and Sakai, S., Jpn. J. Appl. Phys. 37, 626 (1998).
12) Trager-Cowan, C., Manson-Smith, S. K., Cowan, D. A., Sweeney, F., McColl, D., Mohammed, A., Timm, R., Middleton, P. G., Donnell, K. P. O., Zubia, D. and Hersee, S. D., Mater. Sci. Eng., B 82, 19 (2001).
13) Feltin, E., Beaumont, B., Laügt, M. and De Mierry, P., Vennegues, P., Leroux, M. and Gibart, P., Phys. Status Solidi A 188, 531 (2001).
14) Amano, H., Asahi, T. and Akasaki, I., Jpn. J. Appl. Phys., Part 1 29 205, (1990).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed