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GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1100] oriented GaN substrates

Published online by Cambridge University Press:  11 February 2011

C. Q. Chen ,
M. E. Gaevski ,
W. H. Sun ,
E. Kuokstis ,
J. W. Yang ,
G. Simin ,
M. A Khan ,
H. P. Maruska ,
D. W. Hill  and
M. M. C. Chou
...Show all authors
C. Q. Chen
Affiliation:
Depart. of Electr. Engineering, University of South Carolina, Columbia, SC29208, USA
M. E. Gaevski
Affiliation:
Depart. of Electr. Engineering, University of South Carolina, Columbia, SC29208, USA
W. H. Sun
Affiliation:
Depart. of Electr. Engineering, University of South Carolina, Columbia, SC29208, USA
E. Kuokstis
Affiliation:
Depart. of Electr. Engineering, University of South Carolina, Columbia, SC29208, USA
J. W. Yang
Affiliation:
Depart. of Electr. Engineering, University of South Carolina, Columbia, SC29208, USA
G. Simin
Affiliation:
Depart. of Electr. Engineering, University of South Carolina, Columbia, SC29208, USA
M. A Khan
Affiliation:
Depart. of Electr. Engineering, University of South Carolina, Columbia, SC29208, USA
H. P. Maruska
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, USA
D. W. Hill
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, USA
M. M. C. Chou
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, USA
J. J. Gallagher
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, USA
B. H Chai
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, USA
J. H. Song
Affiliation:
Dept. of Information and Communications, Kwangju Institute of Science and Technology, Kwangju, 500–712, Republic of Korea
M. Y. Ryu
Affiliation:
Dept. of Information and Communications, Kwangju Institute of Science and Technology, Kwangju, 500–712, Republic of Korea
P. W. Yu
Affiliation:
Dept. of Information and Communications, Kwangju Institute of Science and Technology, Kwangju, 500–712, Republic of Korea
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Abstract

We report on the homoepitaxial growth of GaN on freestanding [1100] oriented GaN substrates using metalorganic chemical vapor deposition. A proper pretreatment of the substrates was found to be essential for the GaN homoepitaxy. The influence of growth conditions such as V/III molar-ratio and temperature on the surface morphology and optical properties of epilayers was investigated. Optimized pretreatment and growth conditions led to high quality [1100] oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Based on these GaN epilayer, AlGaN/GaN multiple quantum wells have been grown on the freestanding M-plane GaN. Photoluminescence data confirm that built-in electric field for M-plane structures is very weak, and this situation results in a stronger PL intensity in comparison with C-plane multiple quantum wells in tests at low excitation level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L4.2
Copyright
Copyright © Materials Research Society 2003

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References

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