Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-23T08:32:17.748Z Has data issue: false hasContentIssue false
  • English
  • Français

Gallium Nitride Multioperate Optoelectronic Devices

Published online by Cambridge University Press:  10 February 2011

V. G. Sidorov ,
A. G. Drizhuk  and
D. V. Sidorov
V. G. Sidorov
Affiliation:
Semiconductor Physics Department, State Technical University, 29 Politechnicheskaya Str., St. Petersburg, 195251 Russia, rykov@phsc3.stu.neva.ru
A. G. Drizhuk
Affiliation:
Politechnical Institute, Vologda, Russia
D. V. Sidorov
Affiliation:
Semiconductor Physics Department, State Technical University, 29 Politechnicheskaya Str., St. Petersburg, 195251 Russia, rykov@phsc3.stu.neva.ru
Get access

Abstract

Opportunity of creation of several optoelectronic devices such as optron, photoreceiver, switch device, IR-to-visible signal transformer and others based on i-n-GaN light emitting diodes (LED) is shown. Technology and properties of GaN LED in relation to the desired device properties are discussed. A discussion of issues relating to electrical and optical positive feed back between the device elements is also included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1137
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Henish, H.K., Electroluminescence, Pergamon Press, Oxford-London-New York-Paris, 1962.Google Scholar
2. Drizhuk, A.G., Zaitsev, M.V., Sidorov, V.G. and Sidorov, D.V., in Compound Semiconductors, edited by Shur, M.S. and Suris, R.A. (Inst. Phys. Conf. Ser. No 155: Chapter 4, Bristol and Philadelphia, 1997), pp. 401–404.Google Scholar