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GaInNAs: A New Material in the Quest for Communications Lasers

Published online by Cambridge University Press:  01 February 2011

James S. Harris Jr.  and
Vincent Gambin
James S. Harris Jr.
Affiliation:
Solid State and Photonics Lab, Stanford University CIS-X 328, Via Ortega, Stanford, CA 94305-4075
Vincent Gambin
Affiliation:
Solid State and Photonics Lab, Stanford University CIS-X 328, Via Ortega, Stanford, CA 94305-4075
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Abstract

Dilute nitride GaInNAs alloys grown on GaAs have quickly become an excellent candidate for lower cost 1.3-1.55νm vertical cavity surface emitting lasers (VCSELs) and high power edge emitting lasers in the past few years. Despite the relative immaturity and challenges of this new materials system the results have been very promising. Some of the material challenges include the limited solubility of nitrogen in GaAs, non-radiative defects that may be caused by nitrogen incorporation, and characterization of the unique set of properties nitrogen adds to this metastable alloy. In addition, a new component has been added in order to improve epitaxial growth and optical properties at wavelengths longer than 1.3νm. By adding Sb to the alloy, luminescence has been greatly enhanced between 1.3-1.6νm where normally poor quality material results. This paper describes some of the material challenges and progress in devices based on the GaInNAs and GaInNAsSb system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K4.1
Copyright
Copyright © Materials Research Society 2002

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