Hostname: page-component-7479d7b7d-c9gpj Total loading time: 0 Render date: 2024-07-08T13:10:10.232Z Has data issue: false hasContentIssue false
  • English
  • Français

GaInNAs: A New Material in the Quest for Communications Lasers

Published online by Cambridge University Press:  01 February 2011

James S. Harris Jr.  and
Vincent Gambin
James S. Harris Jr.
Affiliation:
Solid State and Photonics Lab, Stanford University CIS-X 328, Via Ortega, Stanford, CA 94305-4075
Vincent Gambin
Affiliation:
Solid State and Photonics Lab, Stanford University CIS-X 328, Via Ortega, Stanford, CA 94305-4075
Get access

Abstract

Dilute nitride GaInNAs alloys grown on GaAs have quickly become an excellent candidate for lower cost 1.3-1.55νm vertical cavity surface emitting lasers (VCSELs) and high power edge emitting lasers in the past few years. Despite the relative immaturity and challenges of this new materials system the results have been very promising. Some of the material challenges include the limited solubility of nitrogen in GaAs, non-radiative defects that may be caused by nitrogen incorporation, and characterization of the unique set of properties nitrogen adds to this metastable alloy. In addition, a new component has been added in order to improve epitaxial growth and optical properties at wavelengths longer than 1.3νm. By adding Sb to the alloy, luminescence has been greatly enhanced between 1.3-1.6νm where normally poor quality material results. This paper describes some of the material challenges and progress in devices based on the GaInNAs and GaInNAsSb system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K4.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Kondow, M., Uomi, K., Niwa, A., Kitantai, T., Watahiki, S., and Yazawa, Y., “GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance,” Jpn. J. Appl. Phys., vol. 35, no. 2B, pp. 1273–1275, Feb., 1996.Google Scholar
[2] Kondow, M., Natatsuka, S., Kitatani, T., Yazawa, Y., and Okai, M., “Room-temperature continuouswave operation of GaInNAs/GaAs laser diode,” Electron. Lett., vol. 32, no. 24, pp. 2244–2245, Nov., 1996.Google Scholar
[3] Harmand, J. C., Ungaro, G., Largeau, L., and Roux, G. Le, “Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN,” Appl. Phys. Lett., vol. 77, no. 16, pp. 2482–2484, Oct. 16, 2000.Google Scholar
[4] Spruytte, S. G., Larson, M. C., Wampler, W., Coldren, C. W., Petersen, H. E., and Harris, J. S., “Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy,” Journal of Crystal Growth, vol. 227-228, pp. 506–515, July, 2001.Google Scholar
[5] LaPierre, R. R., Robinson, B. J., and Thompson, D. A., “Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy,” Journal of Applied Physics, vol. 79, no. 6, pp. 3021–3027, Apr. 15, 1996.Google Scholar
[6] Stringfellow, G. B., Organometallic vapor-phase epitaxy: theory and practice (Academic Press Boston, 1989) pp. 123.Google Scholar
[7] Mereuta, A., Saint-Girons, G., Bouchoule, S., Sagnes, I., Alexandre, F., Roux, G., Decobert, J., and Ougazzaden, A., “(InGa)(NAs)/GaAs structures emitting in 1-1.6νm wavelength range,” Optical Materials, vol. 17, no. 1-2, pp. 185–188, June, 2001.Google Scholar
[8] Buyanova, I. A., Pozina, G., Hai, P. N., Thinh, N. Q., Bergman, J. P., Chen, W. M., Xin, H. P., and Tu, C. W., “Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy,” Appl. Phys. Lett., vol. 77, no. 15, pp. 2325–2327, Oct. 9, 2000.Google Scholar
[9] Krispin, P., Spruytte, S. G., Harris, J. S., and Ploog, K. H., “Deep-level defects in MBE-grown Ga(As,N) layers,” Physica B, vol. 308-310, pp. 870–873, Dec., 2001.Google Scholar
[10] Gambin, V., Ha, W., Wistey, M., Kim, S., and Harris, J. S., 2001 MRS Proceedings.Google Scholar
[11] Ha, W., Gambin, V., Wistey, M., Bank, S., Kim, S., and Harris, J. S., 2001 Conference Proceedings Leos.Google Scholar
[12] Spruytte, S. G., Coldren, C. W., Harris, J. S., Wampler, W., Krispin, P., Ploog, K., and Larson, M. C., “Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal,” Journal of Applied Physics, vol. 89, no. 8, pp. 4401–4406, Apr. 15, 2001.Google Scholar
[13] Egorov, A. Y., Bernklau, D., Borchert, B., Illek, S., Livshits, D., Rucki, A., Schuster, M., Kaschner, A., Hoffmann, A., Dumitras, G., Amann, M. C., and Riechert, H., “Growth of high quality InGaAsN heterostructures and their laser application,” Journal of Crystal Growth, vol. 227-228, pp. 545–552, July, 2001.Google Scholar
[14] Yang, X., Jurkovic, M. J., Heroux, J. B., and Wang, W. I., “Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers,” Appl. Phys. Lett., vol. 75, no. 2, pp. 178–180, July 12, 1999.Google Scholar
[15] Yang, X., Heroux, J. B., Mei, L. F., and Wang, W. I., “InGaAsNSb/GaAs quantum wells for 1.55νm lasers grown by molecular-beam epitaxy,” Appl. Phys. Lett., vol. 78, no. 26, pp. 4068–4070, June 25, 2001.Google Scholar
[16] Shimizu, H., Kumada, K., Uchiyama, S., and Kasukawa, A., “1.2νm range GaInAs SQW lasers using Sb as surfactant,” Electron. Lett., vol. 36, no. 16, pp. 1379–1381, Aug. 3, 2000.Google Scholar
[17] Harris, J. S. Jr, “Tunable long-wavelength vertical-cavity lasers: the engine of next generation optical networks?,” IEEE J. Select. Topics Quantum Electron., vol. 6, no. 6, pp. 1145–1160, Dec., 2000.Google Scholar