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GaAs/Si Nucleation and Buffer Layer Growth

  • Stephanie M. Koch (a1), Robert Hull (a2), S. Jeffrey Rosner (a3) and James S. Harris (a1)

Abstract

We investigate two aspects of the initial stages of GaAs/Si growth: the effects of Si misorientation on GaAs island nucleation, and the structural changes occurring upon heating the buffer layer to the final deposition temperature. We observe that the GaAs islands tend to nucleate at Si surface steps and grow along them. The shape of the islands depends on the degree and direction of the Si misorientation from (100). Island coalescence occurs as the film grows, such that a 500Å film is almost completely continuous. In situ heating of a 30A film to 5750C for 15 minutes causes the islands to agglomerate, while similar treatment of the 500A film does not appear to expose more of the underlying substrate and in fact improves the film crystallinity.

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1 Masselink, W.T., Henderson, T., Klem, J., Fischer, R., Pearah, P., Morkog, H., Hafich, M., Wang, P.D. and Robinson, G.Y., Appl. Phys. Lett. 45, 1309 (1984).
2 Lee, J.W. in Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J.M (Mater. Res. Soc. Proc. 62, Pittsburg, PA 1986) pp. 2936.
3 Fischer, R., Morkoq, H., Neumann, D. A., Zabel, H., Choi, C., Otsuka, N., Longerbone, M. and Erickson, L.P., J. Appl. Phys. 60, 1640 (1986).
4 Koch, S.M., Rosner, S.J., Hull, R., Yoffe, G.W., and Harris, J. S. Jr., J. Crystal Growth 81, 205 (1987).
5 Ishida, K. in Heteroepitaxy on Silicon II, edited by Fan, J.C.C., Phillips, J.M., and Tsaur, B-Y (Mater. Res. Soc. Proc. 91, Pittsburg, PA 1987) pp. 133140.
6 Ishizaka, A., Nakagawa, K. and Shiraki, Y. in Proc. 2nd Intern. MBE Symp., Tokyo, 1982, p. 183.
7 Koch, S.M., Rosner, S.J., Schlom, D., and Harris, J.S. Jr., in Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J.M (Mater. Res. Soc. Proc. 67, Pittsburg, PA 1986) pp. 3743.
8 Kaplan, R., Surf. Sci. 93, 145 (1980).
9 Henzler, M. and Clabes, J., Jpn. J. Appl. Phys., Suppl. 2, Pt. 2, 389 (1974).
10 Hull, R., Bean, J.C., Chand, N., Leibenguth, R. E., Bahnck, D., Koch, S.M., and Harris, J.S. Jr., presented at the 1987 MRS Fall Meeting, Boston, MA, 1987 (unpublished).
11 Griffith, J.E., Kubby, J.A., and Wierenga, P.E., these proceedings.
12 Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S.M., and Harris, J.S. Jr., in Heteroepitaxy on Silicon, edited by Hull, R., Gibson, J.M., and Smith, D.A. (Mater. Res. Soc. Proc. 94., Pittsburg, PA 1987) pp. 2532.
13 Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S.M., and Harris, J.S. Jr., Appl. Phys. Lett. 51, 1723 (1987)
14 Biegelsen, D.K., Ponce, F.A., Krusor, B.S., Tramontana, J.C., and Yingling, R.D., presented at the 1987 Fall MRS Meeting, Boston, MA, 1987 (unpublished), and private communication.
15 Kroemer, H., J. Crystal Growth 81, 193 (1987).
16 Akiyama, M., Kawarada, Y., Nishi, S., Ueda, T., and Kaminishi, K. in Heteroepitaxy on Silicon edited by Fan, J.C.C. and Poate, J.M (Mater. Res. Soc. Proc. 67, Pittsburg, PA 1986) pp. 5364.
17 Rosner, S.J., Koch, S.M., and Harris, J.S. Jr., in Heteroepitaxy on Silicon II, edited by Fan, J.C.C., Phillips, J.M., and Tsaur, B-Y (Mater. Res. Soc. Proc. 91, Pittsburg, PA 1987) pp. 155160.
18 Hull, R. and Fischer-Colbrie, A., Appl. Phys. Lett. 50, 851 (1987).
19 Chadi, D.J., Phys. Rev. Lett. 59, 1691 (1987).
20 Aspnes, D.E. and Ihm, J., Phys. Rev. Lett. 57, 3054 (1986).
21 Pearson, E.H., Halicioglu, T. and Tiller, W.A., Surf. Sci. 184, 401 (1987).
22 Choi, D.K., Takai, T., Erkoc, S., Halicioglu, T., and Tiller, W.A., J. Crystal Growth 85, (1987).

GaAs/Si Nucleation and Buffer Layer Growth

  • Stephanie M. Koch (a1), Robert Hull (a2), S. Jeffrey Rosner (a3) and James S. Harris (a1)

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