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GaAs/AlGaAs Intersubband MID-Infrared Emitter

  • G. Strasser (a1), S. Gianordoli (a1), L. Hvozdara (a1), H. Bichl (a1), K. Unterrainer (a1), E. Gornik (a1), P. Kruck (a2), M. Helm (a2) and J. N. Heyman (a3)...

Abstract

We report here the growth and characterization of intersubband quantum well structures based on the GaAs/AlGaAs material system, designed to emit radiation at approximately 7 micrometers. We present transport behavior, infrared photocurrent spectra, and electroluminescence data. First attempts to fabricate a laser structure from this devices encountered difficulties with the electrical properties of the AIGaAs waveguide cladding layers. Thus, we present measurements with different waveguide concepts as doped AlAs cladding layers and doped superlattice cladding structures.

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GaAs/AlGaAs Intersubband MID-Infrared Emitter

  • G. Strasser (a1), S. Gianordoli (a1), L. Hvozdara (a1), H. Bichl (a1), K. Unterrainer (a1), E. Gornik (a1), P. Kruck (a2), M. Helm (a2) and J. N. Heyman (a3)...

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