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GaAs Photodetector for X-ray Imaging
Published online by Cambridge University Press: 21 March 2011
Abstract
We describe briefly a cheap and non polluting technique to grow epitaxial GaAs layers, several hundred microns thick, in a matter of hour. Detectors consisting of a p+/i/n+ structure have been realised with these layers and we present their characteristics obtained from currentvoltage, capacitance-voltage measurements as well as their response versus the energy and flux of X-rays.
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- Copyright © Materials Research Society 2002