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Full-Contact Type Linear Image Sensor by Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

Masaki Hayase  and
Hirotaka Arita
Masaki Hayase
Affiliation:
R&D Center for Electronic Devices, Kyocera Corporation, 5–22, Kita-inoue-cho, Higashino, Yamashina-ku, Kyoto, 607, Japan
Hirotaka Arita
Affiliation:
R&D Center for Electronic Devices, Kyocera Corporation, 5–22, Kita-inoue-cho, Higashino, Yamashina-ku, Kyoto, 607, Japan
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Abstract

A new type of the contact linear image sensor array using amorphous silicon photodiodes has been developed. The new device, namely “Full Contact” type, linear image sensor, has a pinhole of 60 µm in diameter at the center of the amorphous silicon photodiode pixel. With this structure, the focusing lens can be removed and the optical path can be reduced by about one half as compared with an ordinary facsimile scanner. Eventually the device becomes quite compact in volume and production process are rather simple, result in low cost. LED driven 1728 pixels for A4 size and 2048 pixels for B4 size devices with the resolution of 8 dots/mm have been developed so far. A series of technical data for the development of devices and their operational performance are presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 413
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Kurihara, H., Takeshita, T. and Morozumi, S. Amorphous Silicon Technology-1989, edited by Madan, A., Thompson, M.J., Taylor, P.C. Hamakawa, Y., LeComber, P.G. (Mater.Res.Soc.Proc. 149, Pittsburgh, PA 1989) pp.221–232 Google Scholar
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4. Hayase, M. and Arita, H., Record of the 1989 Kansai-Section Joint Convention of Institutes of Electrical Engineering, Osaka, 1989, S30 Google Scholar