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Free Carrier Lifetime in a-Si,Ge:H Alloys

  • D.A. Young (a1), P.M. Fauchek (a1), Y.M. Liu (a2), W.L. Nighan (a2) and C.M. Fortmann (a3)...

Abstract

The lifetime of carriers injected optically in the extended states of amorphous silicon-germanium alloys has been measured by time-resolved pump and probe optical techniques using either a femtosecond dye laser or a picosecond free electron laser. When Ninj > 1018 cm-3, the lifetime of the carriers is in the picosecond time domain. Our results are comparable to what we have observed previously in a-Si:H and very recently in a-Si,C:H. There are two lifetime regimes: at high densities, the recombination is bimolecular and nonradiative, whereas at lower densities, the recombination tends to be monomolecular but still nonradiative. The origin of these lifetimes is discussed.

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Free Carrier Lifetime in a-Si,Ge:H Alloys

  • D.A. Young (a1), P.M. Fauchek (a1), Y.M. Liu (a2), W.L. Nighan (a2) and C.M. Fortmann (a3)...

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