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Fourier Transform Infrared Spectroscopy Characterization of AlN Thin Films Grown on Sacrificial Silicon Oxide Layers via Metal Organic Vapor Phase Expitaxy

  • Sridhar Kuchibhatla (a1), L.E. Rodak (a2) and D Korakakis (a3)

Abstract

Aluminum Nitride (AlN) films were grown using Metal Organic Vapor Phase Epitaxy (MOVPE) techniques on Si (111) substrates patterned with SiOx stripes and the vibrational properties of these films were investigated by Fourier transform infrared (FTIR) techniques. The grown films contained a predominantly wurtzite AlN phase in addition to oxidized aluminum and mixed AlN phases. The AlN film on amorphous silicon oxide (SiOx) was prone to corrosion when subjected to wet etching in buffered hydrofluoric acid solution thereby changing the material properties of the AlN film on SiOx. The etching process significantly reduced the oxidized aluminum phase and mixed AlN phases.

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[1] Cimalla, V. Pezoldt, J. Ambacher, O. J. Phys. D: Appl. Phys. 40 (2007) 63866434.
[2] Turner, R.C. Fuierer, P.A. Newnham, R.E. Shrout, T.R. Appl. Acoust. 41 (1994) 299324.
[3] Iborra, E. Olivares, J. Clement, M. Vergara, L. Sanz-Hervas, A., Sangrador, J. Sens. Actuator. A115 (2-3) (2004) 501507.
[4] Olivares, J. Clement, M. Iborra, M. Vergara, E. Sánchez-Rojas, L., Vázquez, J.L., Sanz, P. Proc. SPIE – The Internatl. Soc. Opt. Engg, Smart. Sens, Actuator and MEMS II, 5836 (2005) 1626.
[5] Katona, T. Cantu, P. Keller, S. Wu, Y. Speck, J. DenBaars, S. Appl. Phys. Lett. 84 (2004) 50255027.
[6] Tanaka, S. Kawaguchi, Y. Yamada, K. Sawaki, N. Hibino, M. Hiramatsu, K. Proc. Internatl Workshop on Nitride. Semi (2000) 300–3.
[7] Rodak, L.E. Kuchibhatla, Sridhar, Korakakis, D. Mater. Lett. 63 (2009) 15711573.
[8] Kato, Y. Kitamura, S. Hiramatsu, K. Sawaki, N. J. Crys. Growth 144 (1994) 133–40.
[9] Prokofyeva, T. Seon, M. Vanbuskirk, J. Holtz, M. Nikishin, S.A. Faleev, N.N. Temkin, H. Zollner, S. Phys. Rev. B63 (2001) 125313–1-7
[10] Ibanez, J. Hernandez, S. Alarcon-Llado, E., Cusco, R. Artus, L. Novikov, S.V. Foxon, C.T. Calleja, E. J. Appl. Phys. 104 (2008) 033544–1-7.
[11] Chowdhuri, A.R. Takoudis, C. G. Klie, R. F. Browning, N. D. Appl. Phys. Lett. 80 (2002) 4241.
[12] Sanz-Hervas, A., Iborra, E. Clement, M. Sangrador, J. Aguilar, M. Diam. Rela. Mater. 12 (2003) 1186–9.
[13] Lebedev, V. Kaiser, U. Foerster, C. Pezoldt, J. Biskupek, J. Ambacher, O. J. Appl. Phys. 97 (2005) 114306–1-6.
[14] Iborra, E. Clement, M. Vergara, L. Sanz-Hervas, A., Olivares, J. Sangrador, J. Appl. Phys. Lett. 88 (2006) 231901–1-3.
[15] Akiyama, M. Kamohara, T. Kano, K. Teshigahara, A. Kawahara, N. App. Phys. Lett. 93 (2008) 021903–1-3.

Keywords

Fourier Transform Infrared Spectroscopy Characterization of AlN Thin Films Grown on Sacrificial Silicon Oxide Layers via Metal Organic Vapor Phase Expitaxy

  • Sridhar Kuchibhatla (a1), L.E. Rodak (a2) and D Korakakis (a3)

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