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Formation of Well-Separated Buried and Surface Nickel-Silicide Layers in a Single Ion Implantation Step

Published online by Cambridge University Press:  25 February 2011

M. F. Wu
Affiliation:
Department of Technical Physics, Peking University, Beijing, PR China
J. De Wachter
Affiliation:
Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
P. Hendrickx
Affiliation:
Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
H. Pattyn
Affiliation:
Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
A. M. Van Bavel
Affiliation:
Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
G. Langouche
Affiliation:
Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
J. Vanhellemont
Affiliation:
Interuniversity Microelectronics Center, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
Interuniversity Microelectronics Center, Kapeldreef 75, B-3001 Leuven, Belgium
M. Maenhoudt
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, University of Leuven, B-3001 Leuven, Belgium
Y. Bruynseraede
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, University of Leuven, B-3001 Leuven, Belgium
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Abstract

An unusual Ni distribution with two completely separated buried and surface suicide layers has been observed after Ni ion implantation in Si(111) kept at a temperature of 300° C, with a dose of 1.1 × 1017/cm2 and at a fixed energy of 90 keV. RBS/channeling, AES and cross-sectional TEM have been used to study this phenomenon as a function of the substrate temperature and Co co4mplantation. A model is presented, based on the diffusion of the transition metal, the defect annealing during the implantation, and the gettering power of the surface and the end of range defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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