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Formation of Titanium Silicide At Atmospheric Pressure

Published online by Cambridge University Press:  15 February 2011

Peter Revesz ,
Jeno Gyimesi  and
Jozsef Gyulai
Peter Revesz
Affiliation:
Central Research Institute for Physics, H-1525 Budapest 114, P.O.B. 49, Hungary
Jeno Gyimesi
Affiliation:
Central Research Institute for Physics, H-1525 Budapest 114, P.O.B. 49, Hungary
Jozsef Gyulai
Affiliation:
Central Research Institute for Physics, H-1525 Budapest 114, P.O.B. 49, Hungary
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Abstract

Two problems connected with the growth of Ti-silicide have been investigated. It is shown if a silicon dioxide step on a single crystal of silicon covered with titanium is annealed then, following vertical growth on the silicon part, lateral growth of Ti-silicide takes place over the oxide layer. We also studied the problems of Ti-silicide growthon samples implanted with high doses of Sb, As, P, Ar and O prior to Ti evaporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 417
Copyright
Copyright © Materials Research Society 1982

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References

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