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The Formation of Tin-Encapsulated Silver Films by Nitridation of Silver-refractory metal alloys in NH3

  • Daniel Adams (a1), T. L. Alford (a1), T. Laursen (a1), F. Deng (a2), R. Morton (a2) and S. S. Lau (a2)...

Abstract

Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH3 at temperatures between 400-700°C for various times. Upon annealing Ti segregates to the surface and alloy/SiO2 interface to form a TiN(O) surface layer and a TiO/Ti5Si3 interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.

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The Formation of Tin-Encapsulated Silver Films by Nitridation of Silver-refractory metal alloys in NH3

  • Daniel Adams (a1), T. L. Alford (a1), T. Laursen (a1), F. Deng (a2), R. Morton (a2) and S. S. Lau (a2)...

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