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A Formation of SiO2/4H-SiC Interface by Oxidizing Deposited Poly-Si and High Temperature Hydrogen Annealing

  • K. Fukuda (a1), K. Sakamoto (a2), K. Nagai (a2), T. Sekigawa (a1) (a2), S. Yoshida (a1) (a2) and K. Arai (a1) (a2)...

Abstract

A formation of SiO2/4H-SiC interfaces by oxidizing deposited poly-Si on a 4H-SiC substrate and high temperature hydrogen annealing at low pressure ( 8.5×102 Pa ) has been investigated. The oxidation rate of deposited poly-Si was approximately 100 times faster than that of a SiC. Hydrogen annealing more effectively reduced the flat band voltage shift ( ΔVfb ) of the 4H-SiC MOS structure than argon and vacuum annealing. Moreover, the good SiO2/4H-SiC interface was formed because ΔVfb decreased as the oxidation temperature increased.

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