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Formation of Silicides by Rapid Thermal Annealing Over Polycrystalline Silicon

Published online by Cambridge University Press:  26 February 2011

J. Narayan ,
T. A. Stephenson ,
T. Brat ,
D. Fathy  and
S. J. Pennycook
J. Narayan
Affiliation:
Materials Engineering Department, North Carolina State University Raleigh, NC 27695
T. A. Stephenson
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park NC 27709
T. Brat
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park NC 27709
D. Fathy
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park NC 27709
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN 37831
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Abstract

The formation of titanium suicide over polycrystalline silicon has been investigated after rapid thermal annealing treatment in nitrogen and argon ambients. After rapid thermal annealing 300 Å thick titanium overlayer at 900°C for 10 seconds, the sheet resistance of about 3 Ω/□ was achieved, which decreased to 2 Ω/□ after 1100°C / 10s treatment. The TiSi2 Phase was found to be stable after RTA treatments up to 1100°C /10s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. In the nitrogen ambient, an external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form after the RTA treatment, but the surface was found clean in the argon ambient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 753
Copyright
Copyright © Materials Research Society 1986

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References

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