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Formation of Pb Inclusions in Si by Ion Implantation

Published online by Cambridge University Press:  10 February 2011

V. S. Touboltsev ,
E. Johnson ,
U. Dahmen ,
A. Johansen ,
L. Sarholt  and
S. Q. Xiao
V. S. Touboltsev
Affiliation:
Ørsted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK 2100 Copenhagen Ø, Denmark.
E. Johnson
Affiliation:
Ørsted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK 2100 Copenhagen Ø, Denmark.
U. Dahmen
Affiliation:
National Center for Electron Microscopy, E.O. Lawrence Berkeley National Laboratory, UC Berkeley, CA, USA
A. Johansen
Affiliation:
Ørsted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK 2100 Copenhagen Ø, Denmark.
L. Sarholt
Affiliation:
Ørsted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK 2100 Copenhagen Ø, Denmark.
S. Q. Xiao
Affiliation:
Ørsted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK 2100 Copenhagen Ø, Denmark.
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Abstracr

Si<110> single crystals were implanted at a temperature of 835 K with 150 keV Pb+ ions to a fluence of 1·1020 m−2 corresponding to an average concentration of 2–3 at%. The implanted samples have been studied by Rutherford Backscattering (RBS)/channeling and transmission electron microscopy (TEM) techniques. In as-implanted samples the main fraction of implanted Pb was located on substitutional sites in the Si matrix thus providing a highly supersaturated solution of Pb in Si. Spontaneous precipitation of Pb, giving rise to formation of nanosized Pb inclusions, was found to take place only in the peak region of the implantation. TEM analysis showed that the Pb precipitates had sizes from about 2 to 20 nm and that they grew in parallel cube orientation relationship with the host matrix. The shape of the inclusions was found to be approximately cuboctahedral with poorly developed {111} and {100} facets.

In-situ RBS/channeling heating/cooling experiments on both as-implanted samples and samples previously furnace-annealed at 1175 K showed a distinct melting/solidification hysteresis of the Pb inclusions around the bulk melting point for Pb at 600 K. These results were verified by in-situ TEM heating/cooling experiments on as-implanted samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 411
Copyright
Copyright © Materials Research Society 1998

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References

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