Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-22T22:41:12.352Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of New Semiconducting Ge-Si-Fe Alloy on Si(100) and its Optical Properties

Published online by Cambridge University Press:  10 February 2011

H. Chen ,
P. Han ,
X.D. Huang ,
L.Q. Hu ,
Y. Shi  and
Y.D. Zheng
H. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
P. Han
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
X.D. Huang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
L.Q. Hu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Y. Shi
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Y.D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Get access

Abstract

We report a new semiconducting Ge-Si-Fe alloy thin film grown on Si(100) by reactive deposition epitaxy(RDE) using high vacuum evaporation technique. AES and XRD results show that the new alloy can be regarded as a distorted β-FeSi2 with the Ge participation. The direct band gap of the Ge-Si-Fe alloy was determined to be 0.83eV by optical transmission measurement, which means a red shift of band gap compared with that of β-FeSi2 (Eg=0.87eV).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 287
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Iyer, S.S., Patton, G.L., Stork, J.M.C., Meyerson, B.S. and Harame, D.L., “Heterojunction Bipolar Transistors Using Si-Ge Alloy,” IEEE Trans. Electron Devices, vol.36, no.10, pp.2043–2064, 1989 Google Scholar
[2] Wang, Kang L. and Karunasiri, R.P.G., “SiGe/Si electronics and optoeletronics, J.Vac.Sci.Technol.B, vol.11(3), pp. 1159–1167,1993 Google Scholar
[3] Cherief, N., 'Anterroches, C.D, Cinti, R.C., Tan, T.A.Nguyen and Derrien, J., “Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxy,” Appl.Phys.Lett. vol.55, no.16, pp. 1671–1673,1989 Google Scholar
[4] Alvarez, J., Hinarejos, J.J., Michel, E.G., Castro, G.R. and Miranda, , “Electronic structure of iron silicides grown on Si(100) determined by photoelectron spectroscopies,” Phys.Rev.B, vol.45, 14042–14051,1992 Google Scholar
[5] Han, P., Hu, L.Q. and Wang, R.H., “Strain relaxed SijGe. layers using x step graded structure grown on (100) Si by RRH/VLP-CVD,” 21st International Conference of the Physics of Semiconductors vol.1, pp.843–846, 1992 Google Scholar
[6] Bost, M.C. and Mahan, J.E., “Optical properties semiconducting iron disilicide thin films,” J.Appl.Phys. vol.58, no.7, pp.2698–2703, 1985 Google Scholar