Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-20T02:54:47.864Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Mn Oxide with Thermal CVD and its Diffusion Barrier Property Between Cu and SiO2

Published online by Cambridge University Press:  01 February 2011

Koji Neishi ,
Shiro Aki ,
Jun Iijima  and
Junichi Koike
Koji Neishi
Affiliation:
neishi@material.tohoku.ac.jp, Tohoku University, Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan, +81-22-795-7339, +81-22-795-7338
Shiro Aki
Affiliation:
a4tb4001@stu.material.tohoku.ac.jp, Tohoku University, Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
Jun Iijima
Affiliation:
iijimajj@material.tohoku.ac.jp, Tohoku University, Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
Junichi Koike
Affiliation:
koikej@material.tohoku.ac.jp, Tohoku University, Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
Get access

Abstract

A manganese oxide layer was formed by thermal chemical vapor deposition(CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. The thickness of the Mn oxide layer could be varied 2.6 to 10 nm depending on deposition temperature. Heat-treated samples of PVD Cu / CVD Mn oxide /SiO2 indicated no interdiffusion. The CVD Mn oxide was found to be a good diffusion barrier layer.

Keywords

barrier layerchemical vapor deposition (CVD) (deposition)diffusion
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N03-11
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. International Technology Roadmap for Semiconductors, 2006 Google Scholar
2. Koike, J. and Wada, M., Applied Physics Letter, 87, 041911(2005)Google Scholar
3. Haneda, M., Iijima, J. and Koike, J., Applied Physics Letter, 90, 252107(2007)Google Scholar
4. Koike, J., Haneda, M., Iijima, J., Otsuka, Y., Sako, H. and Neishi, K., Journal of Applied Physics, 102, 043527(2007)Google Scholar
5. Wen-bin, S., Durose, K., Brinkman, A. W. and Tannor, B. K., Material Chemistry and Physics, 47, p.75–77(1997)Google Scholar
6. Maruyama, T. and Osaki, Y., Journal of the Electrochemical Society, 142, p.3137–3141(1995)Google Scholar