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Formation of Microcrystalline Silicon film by RMS Process

  • Cheng Wang (a1), G.N. Parsons (a1), E.C. Buehler (a1), R.J. Nemanich (a1) and G. Lucovsky (a1)...

Abstract

We have deposited microcrystalline, gc-Si, silicon films by using RF reactive magnetron sputtering (RMS) at high substrate temperatures, Ts > 500°C, and at a relatively low partial pressure of hydrogen, PH = 0.40 mTorr, and at low Ts ∼200- 300°C, but with a higher PH > 2 mTorr. We have detected μc-crystallinity by Raman scattering and transmission electron microscopy. We discuss differences in the growth mechanisms for formation of μc-Si under these two deposition conditions.

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Formation of Microcrystalline Silicon film by RMS Process

  • Cheng Wang (a1), G.N. Parsons (a1), E.C. Buehler (a1), R.J. Nemanich (a1) and G. Lucovsky (a1)...

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