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Formation of Ge Nanocrystals Passivated with Si by Gas Evaporation of Si and Ge

  • Junjie Si (a1), H. Ono (a1), K. Uchida (a1), S. Nozaki (a1) and H. Morisaki (a1)...

Abstract

Two methods are employed in the gas evaporation technique to form Ge nanocrystals with the Si-passivated surface. One uses one boat with a SiGe alloy as a source, and the other uses two boats each with Si and Ge. As a result of characterization by the x-ray diffraction (XRD) measurement, Raman scattering and x-ray photoelectron spectroscopy (XPS), it is found that Ge nanocrystals with the Si-passivated surface were formed by coevaporation of Si and Ge from two boats, while SiGe alloy nanocrystals were formed by evaporation of the Si-Ge alloy source from one boat.

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Formation of Ge Nanocrystals Passivated with Si by Gas Evaporation of Si and Ge

  • Junjie Si (a1), H. Ono (a1), K. Uchida (a1), S. Nozaki (a1) and H. Morisaki (a1)...

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