Skip to main content Accessibility help
×
Home

Formation of Ga2O3 barrier layer in Cu(InGa)Se2 superstrate devices with ZnO buffer layer

  • Jes K. Larsen (a1), Peipei Xin (a1) and William N. Shafarman (a1)

Abstract

The junction formation when Cu(InGa)Se2 is deposited onto ZnO in a superstrate configuration (glass/window/buffer/Cu(InGa)Se2/contact) is investigated by x-ray photoelectron spectroscopy and analysis of device behavior. When Cu(InGa)Se2 is deposited on ZnO, a Ga2O3 layer is formed at the interface. Approaches to avoid the formation of this unfavorable interlayer are investigated. This includes modifications of the process to reduce the thermal load during deposition and improvement of the thermal stability of the ZnO buffer layer. It was demonstrated that both lowering of the substrate deposition temperature and deposition of the ZnO buffer layer at elevated temperature limits the Ga2O3 formation. The presence of Ga2O3 at the junction does affect the device behavior, resulting in a kink in JV curves measured under illumination. This behavior is absent in devices with limited Ga2O3 formation.

Copyright

References

Hide All
1. Yoshida, T. and Birkmire, R.W., Proc. 11th European Communities Photovoltaic Solar Energy Conf. 811, 811 (1992).
2. Nakada, T., Mise, T., Kume, T., and Kunioka, A., 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion 413 (1998).
3. Nakada, T. and Mise, T., Proceedings of the 17th E.C. Photovoltaic Solar Energy Conference 1027 (2001).
4. Nakada, T., Thin Solid Films 480481, 419 (2005).
5. Terheggen, M., Heinrich, H., Kostorz, G., Haug, F.-J., Zogg, H., and Tiwari, A.. N., Thin Solid Films 403404, 212 (2002).
6. Robertson, J., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, 1785 (2000).
7. Scheer, R. and Schock, H.W., Chalcogenide Photovoltaics: Physics, Technologies, and Thin Film Devices (Wiley-VCH, 2011).
8. Wilson, J.D., Birkmire, R.W., and Shafarman, W.N., in 2008 33rd IEEE Photovolatic Specialists Conference (IEEE, 2008), pp. 1–5.
9. Wagner, C.W., Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics Division, Perkin-Elmer Corp., 1979).
10. Minemoto, T., Matsui, T., Takakura, H., Hamakawa, Y., Negami, T., Hashimoto, Y., and Uenoyama, T., Solar Energy Materials & Solar Cells 67, 83 (2001).
11. Rudmann, D., da Cunha, A.F., Kaelin, M., Kurdesau, F., Zogg, H., Tiwari, A.N., and Bilger, G., Applied Physics Letters 84, 1129 (2004).
12. Hegedus, S.S. and Shafarman, W.N., Progress in Photovoltaics: Research and Applications 12, 155 (2004).

Keywords

Formation of Ga2O3 barrier layer in Cu(InGa)Se2 superstrate devices with ZnO buffer layer

  • Jes K. Larsen (a1), Peipei Xin (a1) and William N. Shafarman (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed