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Formation of Excess Donors During High-Dose 74Ge+ Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Z. Xia ,
E. Ristolainen ,
R. Elliman ,
H. Ronkainen ,
S. Eränen ,
P. Kuivalainen ,
M. Sopanen ,
T. Tuomi  and
P. Holloway
Z. Xia
Affiliation:
VTT Electronics, P.O. Box 11012, FIN-02044 VTT, Finland
E. Ristolainen
Affiliation:
Helsinki University of Technology, FIN-02150 Espoo, Finland
R. Elliman
Affiliation:
Australian National University, Canberra, ACT 0200, Australia
H. Ronkainen
Affiliation:
VTT Electronics, P.O. Box 11012, FIN-02044 VTT, Finland
S. Eränen
Affiliation:
VTT Electronics, P.O. Box 11012, FIN-02044 VTT, Finland
P. Kuivalainen
Affiliation:
VTT Electronics, P.O. Box 11012, FIN-02044 VTT, Finland
M. Sopanen
Affiliation:
Helsinki University of Technology, FIN-02150 Espoo, Finland
T. Tuomi
Affiliation:
Helsinki University of Technology, FIN-02150 Espoo, Finland
P. Holloway
Affiliation:
University of Florida, Gainesville, FL 32601, USA
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Abstract

Recently observations that high-dose Ge implantations into Si substrates caused the n-type carrier concentration to increase were attributed to residual structural defects after activation annealing [7,12]. However, co-implantation of an n-type impurity is another possibility. The origin of this excess donor concentration has been studied in this work. The possibilities of residual defects versus implantation of impurities have been investigated using two different implanters and materials analysis. Comparison of data from different implanters showed that the concentration of excess donors was sensitive to the implanter configuration. Furthermore, transmission electron microscopy (TEM), Rutherford backscattering channeling (RBS-C), and spreading resistance profiling (SRP) data showed that the excess donor effect was related to impurities rather than residual defects. Secondary-ion mass spectroscopy (SIMS) and SRP measurements confirmed that impurities such as 75As ions were present after implants. This impurity easily explains the excess donor concentration when 75Ge implants are performed into silicon wafers doped with phosphorous.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 261
Copyright
Copyright © Materials Research Society 1995

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References

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