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Formation of Double-Height Si(001) Steps by Sputtering with Xe Ions - A Computer Simulation

Published online by Cambridge University Press:  22 February 2011

K.-H. Heinig ,
D. Stock ,
H. Boettger ,
V.A. Zinovyev ,
A.V. Dvurechenskii  and
L.N. Aleksandrov
K.-H. Heinig
Affiliation:
Research Center Rossendorf Inc., P.O. Box 510119, D-01314 Dresden, Germany
D. Stock
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave, Murray Hill, New Jersey 07974
H. Boettger
Affiliation:
Research Center Rossendorf Inc., P.O. Box 510119, D-01314 Dresden, Germany
V.A. Zinovyev
Affiliation:
Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
A.V. Dvurechenskii
Affiliation:
Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
L.N. Aleksandrov
Affiliation:
Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
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Abstract

A study of the recently observed double-height Si(001) step formation by sputtering with low-energy Xe ions is presented. The modeling of the process has been separated in two stages: (i) Molecular dynamics (MD) simulations of the interaction of 225 eV Xe ions with Si(001) surfaces and (ii) calculation of the step kinetics by reaction-diffusion equations. It is found that a single Xe ion produces surface vacancies arranged in one cluster, some adatoms and on the average one sputtered atom. For adjacent terraces on a vicinal Si(001)-(2 × 1) surface separated by SA- and SB-steps, respectively, the adatom diffusion as well as their attachment and detachment at steps and vacancy clusters determines the kinetics of the steps and results in double-height Si(001) steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 1035
Copyright
Copyright © Materials Research Society 1994

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References

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