Article contents
Formation of Dislocations in NiAl Single Crystals Studied by In Situ Electrical Resistivity Measurement
Published online by Cambridge University Press: 10 February 2011
Abstract
This paper reports experiments in which in situ electrical resistivity measurements were used to monitor the formation of dislocations in initially dislocation-free NiAl single crystals. The electrical resistivity is found to exhibit an abrupt jump at the onset of plastic yielding. This is interpreted to result from an abrupt nucleation of a massive density of dislocations at the yield point.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1998
References
REFERENCES
- 2
- Cited by