In this article structural properties as well as morphological aspects of CuIn(S,Se)2 thin film solar cell absorbers, produced by annealing of electroplated precursors, are discussed. Real-time X-ray diffraction (XRD) experiments while precursor annealing have shown, that a reduced amount of electrodeposited selenium is the key parameter to realize a chalcopyrite formation mechanism similar to the one known for sputtered stacked elemental layer (SEL) precursors. Absorber layers processed from precursors produced by simultaneous electrodeposition of copper, indium and selenium show a preferable absorber morphology with an average grain size on the micrometer scale when the electrochemically deposited amount of selenium is reduced to [Se] / [In] = 0.1. The amount of selenium, missing for the formation of a stoichiometric chalcopyrite, was deposited in a second process step prior to precursor annealing. Solar cells produced from these absorbers show light conversion efficiencies up to 10%.