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Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

Published online by Cambridge University Press:  22 February 2011

J. Teichert ,
L. Bischoff ,
E Hesse ,
D. Panknin  and
W. Skorupa
J. Teichert
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Material Research, P.O. Box 510119, D-01314 Dresden, Germany
L. Bischoff
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Material Research, P.O. Box 510119, D-01314 Dresden, Germany
E Hesse
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Material Research, P.O. Box 510119, D-01314 Dresden, Germany
D. Panknin
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Material Research, P.O. Box 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Material Research, P.O. Box 510119, D-01314 Dresden, Germany
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Abstract

The maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt suicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 741
Copyright
Copyright © Materials Research Society 1994

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References

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