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Formation of Chemically Clean and Morphologically Smooth PtSi/Si Interfaces

  • Suhit R. Das (a1), D-X. Xu (a1), J. Phillips (a1), J. McCaffrey (a1), L. LeBrun (a1) and A. Naem (a2)...

Abstract

PtSi/Si interfaces have been formed by depositing Pt layers on chemically cleaned, lightly doped, n-type Si (100) wafers in a UHV magnetron sputter-deposition system using ultra high purity Ar as the sputter gas, followed by ex-situ silicidation in N2 ambient utilizing a 3-step rapid thermal annealing (RTA) process. The polycrystalline PtSi layer, with oriented grains ranging in size from 50-100 nm, exhibits a columnar growth morphology. The PtSi/Si interface is planar with interface roughness in the order of 5 nm peak-to-peak. Auger depth profile shows uniform composition through the PtSi layer and a clean and chemically abrupt PtSi/Si interface.

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Formation of Chemically Clean and Morphologically Smooth PtSi/Si Interfaces

  • Suhit R. Das (a1), D-X. Xu (a1), J. Phillips (a1), J. McCaffrey (a1), L. LeBrun (a1) and A. Naem (a2)...

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