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Formation of an Ordered Array of Nanocrystalline Si Dots by Using a Solution Droplet Evaporation Method

Published online by Cambridge University Press:  21 March 2011

Yoshishige Tsuchiya
Affiliation:
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Tatsuya Iwasa
Affiliation:
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Atsushi Tanaka
Affiliation:
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Ko-Ichi Usami
Affiliation:
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Hiroshi Mizuta
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Shunri Oda
Affiliation:
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Abstract

This paper reports on a new bottom-up technique of forming silicon nanostructures based on natural aggregation of nanocrystalline (nc) -Si dots in the solution. We first study how the nc-Si dots deposited on the Si substrate get mobile in the solution by simply dipping the substrate with the nc-Si dots on into various solutions. We then demonstrate a solution droplet evaporation method that utilizes aggregation of the dots when we evaporate a solution droplet applied onto the nc-Si dots randomly deposited on the Si substrate. It is shown that the nc-Si dots are assembled well in a droplet of the hydrofluoric acid solution, resulting in various regular patterns on the substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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