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Formation of a New Blue-Shift Emission in Highly Be-Doped GaAs Grown by Molecular Beam Epitaxy

  • Yunosuke Makita (a1), Masahiko Mori (a1), Nobukazu Ohnishi (a2), Paul Phelan (a1), Takashi Taguchi (a3), Yoshinobu Sugiyama (a1) and Munecazu Tacano (a1)...

Abstract

Photoluminescence measurements of Be-doped GaAs, grown by molecular beam epitaxy, were carried out at low temperature as a function of acceptor concentration. Results revealed that besides the well-defined emission, [g-g], which is exclusively relevant to acceptor impurities, an additional specific emission, temporarily denoted by [g-g]α is formed near the band-edge, when the concentration of acceptors exceeds 1×1019 cm−3:. From the viewpoint of application it was suggested that also in case of acceptors, photoluminescence spectra can be practically used for the precise determina-tion the acceptor concentration.

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Formation of a New Blue-Shift Emission in Highly Be-Doped GaAs Grown by Molecular Beam Epitaxy

  • Yunosuke Makita (a1), Masahiko Mori (a1), Nobukazu Ohnishi (a2), Paul Phelan (a1), Takashi Taguchi (a3), Yoshinobu Sugiyama (a1) and Munecazu Tacano (a1)...

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