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Formation Of A Metastable Nisi Phase On <111> Si Induced By Pulsed Laser Irradiation

Published online by Cambridge University Press:  28 February 2011

F. Priolo ,
P. Baeri ,
M.G. rimaldi  and
E. Rimini
F. Priolo
Affiliation:
Dipartimento Di Fisica dell'Università, Corso Italia 57, 195129 Catania, Italy
P. Baeri
Affiliation:
Dipartimento Di Fisica dell'Università, Corso Italia 57, 195129 Catania, Italy
M.G. rimaldi
Affiliation:
Dipartimento Di Fisica dell'Università, Corso Italia 57, 195129 Catania, Italy
E. Rimini
Affiliation:
Dipartimento Di Fisica dell'Università, Corso Italia 57, 195129 Catania, Italy
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Abstract

Thermally grown NiSi layers on <111> Si substrates were irradiated by 35 nsec Nd glass laser pulses in the energy density range 0.3−2.0 J/cm2. Time resolved reflectivity measurements were performed during the irradiation to detect surface melting. The samples were analyzed by 2.0 MeV He+ Rutherford Backscattering Spectrometry in combination with channeling effect. The measured threshold for surface melting was 0.5 J/cm2. Irradiation at energy densities higher than 1.3 J/cm2 changed the silicides layer composition because of the mixing with the underlying silicon. In the intermediate energy density range (0.7−1.1 J/cm ) slight changes in composition were observed, a strong alignement of NiSi molecules along the <111> substrate direction was however observed. The measured Xmin was about 30%. It seems then that an epitaxial NiSi phase can be grown by pulsed laser irradiation with a suitable choice of the incident energy density. Work is in progress to identify this new NiSi phase by TEM. However this ordered phase is a metastable one since after anunealing at 250°C, 30min the channeling yield reduction disappeared without any appreciable change in composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 491
Copyright
Copyright © Materials Research Society 1987

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References

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