Skip to main content Accessibility help
×
Home

The Formation Mechanism and Removal Methods of Metal Pillar by Plasma Etch

  • Eungsoo Kim (a1), Dong-Won Yun (a1), Chang-Bum Jeong (a1), Sang-Kug Han (a1), Soon-Kwon Lim (a1) and Kyu-Hyun Choi (a1)...

Abstract

During the plasma etching of Al-Si-Cu alloy used as a metal interconnection, it is generally reported that the metal pillar (or conical residue) affecting the degradation of device yield is formed by the micromasking effect of copper compound. However, it is stilldisputed with the formation mechanism and composition of the micromasking material. Moreover, the elimination method of the metal pillar is not well known.

According to previous reports, it is argued that the micromasking material consists of Cu agglomerates, A12Cu, or CuC1, and the formation mechanism of the micromasking is due to byproduct during plasma etching or reaction product during metal depositionor etching. However, using scanning electron microscopy (SEM), energy dispersive of x-ray (EDX), and high resolution Auger spectroscopy (HRAES), it is newly found that the micromasking consists of three layered structure, that is copper aluminum oxide, A12Cu, and Cu agglomerates. These results are quite different from previous reports. In addition, the removal methods of the metal pillar are suggested, which are high power dry etch process and multilayered metal deposition.

Copyright

References

Hide All
1. Hess, D.W., Solid State Technol. April, 189 (1981).
2. Riely, P.E., Peng, S.S., and Fang, L., Solid State Technol. Feb., 47 (1993).
3. Flamm, D.L. and Herb, G.K., in plasma Etching-An Overview, edited by Manos, D.M. and Flamm, D.L. (Academic Press, San Diego, 1989), p. 49.
4. Suzuki, T. and Kitagawa, H., J. Vac. Sci. Technol., B10 (2), 596 (1992).
5. Daniel, F. and Alberty, R., Physical Chemistry, (Wiley, New York, 1981), p. 126
6. Abraham, T., J. Electrochem. Soc. 134, 2809 (1987).
7. Fuggle, J.C., Kalline, E., Watson, L.M., and Fabian, D.J., Phys. Rev. B16 (2), 750 (1977).
8. Gaarenstroom, S.W. and Winograd, N., J. Chem. Phys. 67 (8), 35003506 (1977).

Related content

Powered by UNSILO

The Formation Mechanism and Removal Methods of Metal Pillar by Plasma Etch

  • Eungsoo Kim (a1), Dong-Won Yun (a1), Chang-Bum Jeong (a1), Sang-Kug Han (a1), Soon-Kwon Lim (a1) and Kyu-Hyun Choi (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.