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Formation and Thermal Stability of End-of-Range Defects in Ge Implanted Silicon
Published online by Cambridge University Press: 22 February 2011
Abstract
By means of transmission electron microscopy we have studied the redissolution of extended end-of-range defects during high temperature rapid thermal annealing. We find, that after the transformation of initially present {113} stacking faults into energetically more favorable structures, each type of end-of-range defect establishes its individual redissolution rate with {111} faulted loops being the most stable configuration.
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- Copyright © Materials Research Society 1994
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