Klema, Jon, Pyle, Ronald, and Domangue, Edward. Reliability implications of nitrogen contamination during deposition of sputtered aluminum/silicon metal films. IEEE International Reliability Physics Symposium, 22:1–5, 1984.
Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G., and Thomas, A.. New failure mechanisms in sputtered aluminum-silicon films. IEEE International Reliability Physics Symposium, 22:6–8, 1984.
Turner, T. and Wendel, K.. The influence of stress on aluminum conductor life. IEEE International Reliability Physics Symposium, 23:142–147, 1985.
Hinode, K., Owada, N., Nishida, T., and Mukai, K.. Stress-induced grain boundary fractures in Al-Si interconnects. Journal of Vacuum Science and Technology B, 5(3):518–522, March/April 1987.
Li, Che-Yu, Black, Ronald D., and LaFontaine, William R.. Analysis of thermal stress-induced grain boundary cavitation and notching in narrow Al-Si metallizations. Applied Physics Letters, 53(l):31–33, July 1988.
Korhonen, M. A., Black, R. D., and Li, Che-Yu. Stress relaxation of passivated aluminum line metallizations on silicon substrates. Journal of Applied Physics, AA(100), 1990.
Paszkiet, C. A., Korhonen, M. A., and Li, Che-Yu. Stress relaxation and void formation in narrow aluminum lines. Manuscript in preparation.