Skip to main content Accessibility help

Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing

  • K.Y. Lee (a1), S.L. Liew (a1), S.J. Chua (a1), D.Z. Chi (a1), H.P. Sun (a2) and X.Q. Pan (a2)...


Phase formation and interfacial microstructure evolution of nickel germanides formed by rapid thermal annealing in a 15-nm Ni/Ge (100) system have been studied. Coexistence of a NiGe layer and Ni-rich germanide particles was detected at 250°C. Highly textured NiGe film with a smooth interface with Ge was observed. Annealing at higher temperatures resulted in grain growth and severe grooving of the NiGe film at the substrate side, followed by serious agglomeration above 500°C. Fairly low sheet resistance was achieved in 250-500°C where the NiGe film continuity was uninterrupted.



Hide All
1. Chui, C.O., Ramanathan, S., Triplett, B.B., McIntyre, P.C. and Saraswat, K.C., IEEE Electron Dev Lett. 23, 473 (2002).
2. Ashburn, S.P., Ozturk, M.C., Wortman, J.J., Harris, G., Honeycutt, J. and Maher, D.M., J. Electron. Mater. 21, 81 (1992).
3. Li, J., Hong, Q.Z., Mayer, J.W. and Rathbun, L., Appl. Phys. Lett. 67, 2506 (1990).
4. Wittmer, M., Nicolet, M.A. and Mayer, J.W., Thin Solid Films, 42, 51 (1977).
5. Hsieh, Y.F., Chen, L.J., Marshall, E.D. and Lau, S.S., Thin Solid Films, 162, 287 (1988).
6. Patterson, J.K., Park, B.J., Ritley, K., Xiao, H.Z., Allen, L.H. and Rockett, A., Thin Solid Films, 253, 456 (1994).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed